s m d ty p e w w w . k e x i n . c o m . c n 1 m os f e t f e a tu r e s v d s ( v ) = 6 0 v i d = 1 a r d s ( o n ) 0 . 4 5 ( v g s = 1 0 v ) r d s ( o n ) 0 . 6 ( v g s = 4 v ) 1.70 0.1 0.42 0.1 0.46 0.1 1.gate 2.drain 3.source a b s o l u te m a x i m u m ra ti n g s t a = 2 5 p a r a m e t e r s y m b o l r a t i n g u n i t d r a i n - s o u r c e v o l t a g e v d s 6 0 g a t e - s o u r c e v o l t a g e v g s 2 0 c o n t i n u o u s d r a i n c u r r e n t i d 1 p u l s e d d r a i n c u r r e n t ( n o t e . 1 ) i d m 2 p o w e r d i s s i p a t i o n p d 2 w j u n c t i o n t e m p e r a t u r e t j 1 5 0 s t o r a g e t e m p e r a t u r e r a n g e t st g - 5 5 t o 1 5 0 v a n o t e . 1 : p w 1 0 m s , d u t y c y c l e 5 0 % e l e c tr i c a l ch a r a c te r i s ti c s t a = 2 5 p a r a m e t e r s y m b o l t e s t c o n d i t i o n s m i n t y p m a x u n i t d r a i n - s o u r c e b r e a k d o w n v o l t a g e v d s s i d = 2 5 0 a , v g s = 0 v 6 0 v z e r o g a t e v o l t a g e d r a i n c u r r e n t i d s s v d s = 6 0 v , v g s = 0 v 1 u a g a t e - b o d y l e a k a g e c u r r e n t i g s s v d s = 0 v , v g s = 2 0 v 1 0 u a g a t e c u t t - o f f v o l t a g e v g s ( o f f ) v d s = 1 0 v , i d = 1 m a 0 . 8 2 v v g s = 1 0 v , i d = 0 . 5 a 0 . 4 5 v g s = 4 v , i d = 0 . 5 a 0 . 6 f o r w a r d t r a n s c o n d u c t a n c e g f s v d s = 1 0 v , i d = 0 . 5 a 0 . 4 s i n p u t c a p a c i t a n c e c i ss 1 7 0 o u t p u t c a p a c i t a n c e c o s s 8 7 r e v e r s e t r a n s f e r c a p a c i t a n c e c r ss 3 2 t u r n - o n d e l a y t i m e t d ( o n ) 2 . 8 t u r n - o n r i s e t i m e t r 2 . 3 t u r n - o f f d e l a y t i m e t d ( o f f ) 5 5 t u r n - o f f f a l l t i m e t f 2 7 s t a t i c d r a i n - s o u r c e o n - r e s i s t a n c e v g s = 0 v , v d s = 1 0 v , f = 1 m h z p f n s v g s ( o n ) = 1 0 v , v d s = 2 5 v , i d = 0 . 5 a , r l = 5 0 , r g = 1 0 r d s ( o n ) m a r k i n g m a r k i n g n u f source (s) internal diode gate protection diode gate (g) drain (d) p b ? f r e e p a c k a g e m a y b e a v a i l a b l e . t h e g ? s u f f i x d e n o t e s a p b ? f r e e l e a d f i n i s h n- ch an n el m osf et 2s k2111- hf
s m d ty p e w w w . k exi n . co m . c n 2 m osf e t t y p i c a l ch a r a c te r i s i ti c s derating factor of forward bias safe operating area 100 80 60 40 20 0 30 60 90 120 150 t a - ambient temperature - ?c dt - derating factor - % forward bias safe operating area 10 5 2 1 0.2 0.1 2 5 20 50 100 v ds - drain to source voltage - v i d - drain current - a 0.5 1 10 single pulse drain current vs. drain to source voltage 1.0 0.8 0.6 0.4 0.2 0 0.4 0.8 1.2 1.6 2.0 v ds - drain to source voltage - v i d - drain current - a 100 ms 1 ms pw = 100 ms dc 4.5 v 4.0 v 3.5 v 3.0 v 2.5 v 10 v v gs = 2.0 v transfer characteristics 1 0.1 0.01 0.001 0.5 1 1.5 2 2.5 3 v gs - gate to source voltage - v i d - drain current - a 0.0001 v ds = 10 v t a = 75 ?c 25 ?c forward transfer admittance vs. drain current 10 1 0.1 0.001 0.01 0.1 1 i d - drain current - a |y fs | - forward transfer admittance - s 0.01 v ds = 10 v 25 ?c 75 ?c t a = C25 ?c drain to source on-state resistance vs. drain current 10 0.5 0.01 0.1 1 10 i d - drain current - a r ds(on) - drain to source on-state resistance - ? 0 v gs = 4 v t a = 75 ?c 25 ?c C25 ?c C25 ?c n- ch an n el m osf et 2s k2111- hf
s m d ty p e w w w . k e x i n . c o m . c n 3 m os f e t t y p i c a l ch a r a c te r i s i ti c s drain to source on-state resistance vs. drain current 1 0.5 0.01 0.1 1 10 i d - drain current - a switching characteristics 100 10 0.05 0.2 1 5 i d - drain current - a t d(on) , t r , t d(off) , t f - switching time - ns 1 drain to source on-state resistance vs. gate to source voltage 1 0.5 0 5 10 20 v gs - gate to source voltage - v r ds(on) - drain to source on-state resistance - ? i d = 0.5 a t a = 75 ?c 25 ?c C25 ?c 0 v gs = 10 v 15 c iss , c oss , c rss - capacitance - pf capacitance vs. drain to source voltage 500 50 0.1 0.5 10 100 v ds - drain to source voltage - v v gs = 0 f = 1 mhz 20 50 0.2 1 2 5 200 100 20 10 c iss c oss c rss 50 20 2 5 0.1 0.5 2 v dd = 25 v v gs(on) = 10 v t d(on) t r t f t d(off) i sd - diode forward current - a source to drain diode forward voltage 1 0.01 0.2 0.4 0.7 1 v sd - source to drain voltage - v 0.8 0.9 0.3 0.5 0.6 0.1 0.001 0.0001 r ds(on) - drain to source on-state resistance - ? n- ch an n el m osf et 2s k2111- hf
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